ML8XX4 series type name ml8624s,ml8924 (980nm high power ld) mitsubishi laser diodes 980 nm high power laser diode description diodes which provide a stable, single transverse mode oscillation with emission wavelength of 980nm, and ML8XX4 series are ingaas/ gaas high power laser standard continuous light output of @200,150,100mw. various power (cw 200,150,100mw) features electrical/optical characteristics application mitsubishi electric preliminary preliminary absolute maximum ratings 980 nm typical emission wavelength reflectivity 4% (front facet) er - doped fiber amplifier high reliability, long operation life ridge waveguide with window structure ( po=200mw, tc=0 - 70deg.c ) note: the absolute maximum rating means the limitation over whi ch the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime . as for the reliability , please refer to the reliability repor t from mitsubishi semiconductor quality assurance depar tment. ( note) degc - 40 ~+100 - storage temperature tstg degc + 0 ~ +70 - case temperature tc v 2 - reverse voltage v r mw 250 cw light output power po unit ratings conditions parameter symbol ma - 0.49 - cw,po=200mw monitor current im ma 350 260 - cw,po=200mw operation current iop deg. 23 18 13 cw,po=200mw beam divergence angle (perpendicular) q^ deg. 9 6 3 cw,po=200mw beam divergence angle (parallel) q// nm - 3 - cw,po=200mw, rms spectral width (rms , - 20db) dl nm 990 980 970 cw,po=200mw (25degc) center wavelength l c v 2.05 1.72 - cw,po=200mw operating voltage vop ma 150 60 - cw threshold current ith unit max typ. min. test conditions parameter symbol er - doped waveguide amplifier f 5.6mm to - can, chip on carrier package uncooled operation (0 - 70degc) ml8624s - 01, ml8924 - 01
ML8XX4 series type name ml8624s,ml8924 (980nm high power ld) mitsubishi laser diodes 980 nm high power laser diode electrical/optical characteristics mitsubishi electric preliminary preliminary ( po=100mw, tc =0 - 70deg.c ) ma - 0.24 - cw,po=100mw monitor current im ma 250 160 - cw,po=100mw operation current iop deg. 23 18 13 cw,po=100mw beam divergence angle (perpendicular) q^ deg. 9 6 3 cw,po=100mw beam divergence angle (parallel) q // nm - 3 - cw,po=100mw, rms spectral width (rms , - 20db) dl nm 990 980 970 cw,po=100mw (25degc) center wavelength l c v 1.90 1.59 - cw,po=100mw operating voltage vop ma 150 60 - cw threshold current ith unit max typ. min. test conditions parameter symbol electrical/optical characteristics ( po=150mw, tc =0 - 70deg.c ) ma - 0.36 - cw,po=150mw monitor current im ma 300 210 - cw,po=150mw operation current iop deg. 23 18 13 cw,po=150mw beam divergence angle (perpendicular) q^ deg. 9 6 3 cw,po=150mw beam divergence angle (parallel) q // nm - 3 - cw,po=150mw, rms spectral width (rms , - 20db) dl nm 990 980 970 cw,po=150mw (25degc) center wavelength l c v 1.95 1.66 - cw,po=150mw operating voltage vop ma 150 60 - cw threshold current ith unit max typ. min. test conditions parameter symbol ml8624s - 03, ml8924 - 03 ml8624s - 02, ml8924 - 02
0 0.2 0.4 0.6 0.8 1 -60 -40 -20 0 20 40 60 0 0.2 0.4 0.6 0.8 1 -60 -40 -20 0 20 40 60 0 50 100 150 200 250 0 100 200 300 400 0 0.2 0.4 0.6 0.8 1 1.2 960 970 980 990 1000 fig.3 far field patterns (po=200mw) q^ angle (deg.) fig.1 light output vs. forward current fig.2 spectrum (po=200mw) ML8XX4 series mitsubishi laser diodes 980 nm high power laser diode type name ml8624s,ml8924 mitsubishi electric preliminary preliminary light output po ( mw) light intensity (arb. unit) wavelength l ( nm) relative intensity q // angle (deg.) relative intensity f forward current i ( ma) tc=70degc tc=25degc tc=0degc tc=70degc tc=25degc tc=0degc tc=70degc tc=25degc tc=0degc tc=70degc tc=25degc tc=0degc
ML8XX4 series mitsubishi laser diodes 980 nm high power laser diode type name ml8624s - f 5.6mm to - can mitsubishi electric preliminary preliminary outline drawings (dimension in mm) lead connection ld pd (3) (4) (1) (2) base f 5.6 +0 - 0.03 x 1 0.1 2 - 90 deg y f 4.25 (3) (4) (0.25) (0.25) (1) (2) note) positional accuracy of the emitting point respect to the base. z 0.10 (1) f 1.0min. f 2.0min. f 3.55 0.1 2.9 0.10 0.25 ( glass) 0.03 18 1 3.8 0.15 1.2 0.1 4 - f 0.45 0.05 (2) f 2.0 0.25 ( p.c.d.) reference plane emitting facet <+ = - <+ = - + - + - + - + - + - + - + - + - + - x, y 0.10 d d d
ML8XX4 series mitsubishi laser diodes 980 nm high power laser diode type name ml8924 mitsubishi electric preliminary preliminary 2 0.1 6 0.2 1 0.1 f 1 0.1 (1) (2) 01 1.5 0.1 1.75 0.2 1.55 0.1 ( beam point) outline drawings (dimension in mm) ld (1) (2) lead connection + - + - + - + - + - + - + -
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